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ChangXin Memory applies for a power circuit patent to dynamically adjust the substrate voltage of MOS with temperature

Article Source：China National Intellectual Property Administration | Author：Financial Sector | Issuing Time：2024.03.26
On March 26, 2024, the financial sector reported that according to the announcement of the China National Intellectual Property Administration, ChangXin Memory Technologies, Inc. applied for a patent entitled "Power circuit, supply method of power voltage and memory", with the publication number of CN117762181A, and the application date of September 2022.



The patent abstract shows that the present disclosure relates to the field of semiconductor circuit design, particularly to a power supply circuit, a method for providing power supply voltage, and a memory. The power supply circuit comprises a temperature sensing module configured to generate a positive temperature coefficient voltage based on a reference signal, and the voltage value of the positive temperature coefficient voltage is positively correlated with the temperature; The judgment module, connected to the temperature sensing module, is configured to generate a driving signal based on the comparison results of the temperature reference voltage and the positive temperature coefficient voltage. The voltage value of the temperature reference voltage is the same as the voltage value of the positive temperature coefficient voltage at the preset temperature; The power supply module connects the judgment module and the temperature sensing module, and is configured to provide the first internal power supply voltage or temperature control voltage based on the driving signal judgment. The voltage value of the temperature control voltage is the same as the voltage value of the positive temperature coefficient voltage to dynamically adjust the substrate voltage of the MOS with temperature.
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